Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2666-rdimm-16gb-2x-sr 2V Technology DDR4 Error Correction

2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 2048M x8 Pieces in Kit 1 Compatibility

M470T6554CZ3-CCC Capacity 512MB (1x 512MB) Brand Samsung Speed DDR2-400 - 400MT/s - PC2-3200 Voltage 1

Comprehensive thermal throttling & power management algorithms help prevent overheating and maintain high performance

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Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2666-rdimm-16gb-2x-sr 2V Technology DDR4 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1600 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed