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8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration 36-chip 128Mx4 Pieces in Kit 2 Compatibility
MT18JSF1G72PZ-1G6D1 Capacity 8GB (1x 8GB) Brand Micron Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
x8 configuration RAM kit from Hynix is for use in DDR3 compatible systems and operates at 1066 MT/s with an overall transfer rate of PC3-8500
This 4GB (2x 2GB) DDR3 1333 MT/s Dual rank RAM kit from Samsung is for use in DDR3 compatible systems and operates at 1333 MT/s with an overall transfer rate of PC3-10600
Samsung 8GB (1x 8GB) CL15 DDR4-2133 PC4-17000 1.2V 288-pin UDIMM RAM Module Voltage_2.5V 8V Technology DDR2 Error CorrectionProduct Overview This 8GB (1x 8GB) DDR4 2133 MT s RAM module from Samsung is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL15, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
