Hynix 4GB (1x 4GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Module Signal Processing_Fully Buffered Dramatically improve performance and handle

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR2 400 MT/s 240-pin RDIMM RAM module from Infineon

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1866 MT/s 240-pin RDIMM RAM module from Crucial

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M378B5173QH0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

Hynix 4GB (1x 4GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Module Signal Processing_Fully Buffered Dramatically improve performance and handleProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.