Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr2-667-eudimm-1gb-1x HMA84GR7MFR4N-UH Capacity 32GB (1x 32GB)

HMA84GR7MFR4N-UH Capacity 32GB (1x 32GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

5V Technology DDR Error Correction ECC Signal Processing Registered Form Factor 184-pin RDIMM Ranks Dual rank Configuration x4 Pieces in Kit 2

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 256Mx8 Pieces in Kit 1 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR3 1866 MT/s 240-pin LRDIMM RAM module from Hynix

Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr2-667-eudimm-1gb-1x HMA84GR7MFR4N-UH Capacity 32GB (1x 32GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and