Hynix 1GB (2x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Kit Model_Mac_Book_Pro_5_2 8V Technology DDR2 Error Correction

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 200-pin SODIMM Ranks Dual rank Configuration 16-chip 64M x8 Pieces in Kit 2 Compatibility

8V Technology DDR2 Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Single rank Configuration 9-chip 256M x8 Pieces in Kit 1 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (2x 2GB) DDR2 667 MT/s 240-pin FB-DIMM RAM kit from Samsung

KTD-WS667_2G Capacity 2GB (2x 1GB) Brand Kingston Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

Hynix 1GB (2x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Kit Model_Mac_Book_Pro_5_2 8V Technology DDR2 Error CorrectionProduct Overview This 1GB (2x 512MB) DDR2 533 MT s Dual rank, x16 configuration RAM kit from Hynix is for use in DDR2 compatible systems and operates at 533 MT s with an overall transfer rate of PC2 4200. This RAM kit also operates at a standard voltage of 1. 8V with a CAS Latency of CL4, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical