Hynix 2GB (2x 1GB) CL3 DDR-400 PC3200 2.5V SR x4 ECC Registered 184-pin RDIMM RAM Kit Classification_ram-ddr3l-1866-sodimm-8gb-1x-dr-fm M471B5773CHS-CH9 Capacity 2GB (1x 2GB)

M471B5773CHS-CH9 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

CT16G4DFD8213 Capacity 16GB (1x 16GB) Brand Crucial Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Single rank Configuration x8 Pieces in Kit 1 Compatibility

x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT/s with an overall transfer rate of PC3-12800

Hynix 2GB (2x 1GB) CL3 DDR-400 PC3200 2.5V SR x4 ECC Registered 184-pin RDIMM RAM Kit Classification_ram-ddr3l-1866-sodimm-8gb-1x-dr-fm M471B5773CHS-CH9 Capacity 2GB (1x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (2x 1GB) DDR 400 MT s 184 pin RDIMM RAM kit from Hynix . This Single rank, x4 configuration RAM kit is for use in DDR compatible systems and operates at 400 MT s with an overall transfer rate of PC3200. This RAM kit also operates at a standard voltage of 2. 5V with a CAS Latency of CL3, and